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King Billion Electronics Co., Ltd SF23C4000

- Table of Contents 1 2 3 4 5 6 7 8 9 Function Description______________________________________________________________2 Features ________________________________________________________________________2 Functional block diagram __________________________________________________________3 Pin Description __________________________________________________________________3 Pad Location ____________________________________________________________________4 Absolute Maximum Rating _________________________________________________________5 AC Electrical Characteristics _______________________________________________________5 DC Electrical Characteristics _______________________________________________________6 Updated History __________________________________________________________________6
August 27, 2003
Page 1 of 6
V1.1
This specification is subject to change without notice. Please contact sales person for the latest version before use.
King Billion Electronics Co., Ltd SF23C4000

1 Function Description
The SF23C4000 is a fully static, 512K x 8 bit CMOS Mask Programmable ROM. This device operates in wide operating range. It requires no external clock for its operation and suitable for use with microprocessor program memory, and data memory (speech, graphic, etc).
2 Features
Voltage range 2.4V ~ 5.5V Organization - Memory Cell Array: 512K x 8 Low Operation Current (Typical) 10A Standby mode Current 10mA Active Read Current Fully static operation Three state outputs Package bare chip, PLCC32
August 27, 2003
Page 2 of 6
V1.1
This specification is subject to change without notice. Please contact sales person for the latest version before use.
King Billion Electronics Co., Ltd SF23C4000

3 Functional block diagram
X BUFFER & DECODER [A18..A0] Y BUFFER & DECODER CONTROL LOGIC
MEMORY CELL ARRAY SENSE AMP.
CEn OEn
[Q7.. Q0]
4 Pin Description
A12 A15 A16 NC VDD A18 A17 5 6 7 8 9 2 11 12 13 4 3 2 1 32 31 30
A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS Q3 Q4 Q5 Q6
A14 A13 A8 A9 A11 OE A10 CE Q7
29 28 27 26 25 24 23 22 21
SF23C4000-PLCC32 14 15 16 17 18 19 20
Symbol VDD VSS CEn
Pin No. I/O Description 32 P Positive power supply input pin. 16 P Gound pin. 22 I The CEn (Chip Enable) input is the device selection and power control for internal Mask ROM array. Whenever CEn goes high, the internal Mask ROM will enter standby (power saving) mode. Otherwise, it is in active mode and the contents of the ROM can be accessed.
Page 3 of 6 V1.1
August 27, 2003
This specification is subject to change without notice. Please contact sales person for the latest version before use.
King Billion Electronics Co., Ltd SF23C4000
I

OEn A18 ~ A0 Q7 ~ Q0
24 21 ~ 17, 15 ~13
OEn (Output Enable) is the output control which gates ROM array data onto the data output pins Q7 ~ Q0. I Mask ROM Address input pins. O Mask ROM array Data outputs drive Q7 ~ Q0 pins during read operations (OEn low). The Q7 ~ Q0 pins stay in high-impedance when the chip is deselected (CEn high) or when the outputs are disabled (OEn high).
5 Pad Location
A12 A7 A15 A16 NC VDD VDD VDD A18 A17 A14 A13
A6
A5
A4
NC A8 NC A9 A11 NC
NC
A3
A2
A1 OEN A0
A10 CEN VSS
Q0 Q1 Q2
VSS VSS Q3 Q4 Q5 Q6
Q7
August 27, 2003
Page 4 of 6
V1.1
This specification is subject to change without notice. Please contact sales person for the latest version before use.
King Billion Electronics Co., Ltd SF23C4000

Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pad Name X Coord. Y Coord. A7 108.33 2431.75 A6 108.33 2244.31 A5 108.33 2057.03 A4 108.33 1869.59 NC 108.33 1682.36 NC 108.33 1494.92 NC 108.33 1307.74 NC 108.33 1119.34 A3 108.33 932.17 A2 108.33 744.73 A1 108.33 557.45 A0 108.33 370.01 Q0 108.33 182.72 Q1 395.97 109.14 Q2 583.13 109.14 VSS 997.39 220.71 VSS 1242.34 140.91 VSS 1521.38 108.09 Q3 1684.02 109.14 Q4 1871.18 109.14 Pad No. 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Pad Name X Coord. Y Coord. Q5 2058.62 109.14 Q6 2245.78 109.14 Q7 2745.87 105.79 CEN 2745.87 229.55 A10 2745.87 355.17 OEN 2745.87 480.32 A11 2759.48 1365.83 A9 2759.48 1491.74 A8 2759.48 1617.63 A13 2748.87 2427.92 A14 2748.87 2555.13 A17 2107.66 2566.92 A18 1920.22 2566.92 VDD 1578.76 2513.72 VDD 1404.34 2513.72 VDD 1229.92 2513.72 NC 1029.23 2552.3 A16 841.19 2552.3 A15 495.57 2552.3 A12 308.13 2552.3
6 Absolute Maximum Rating
Items Supply Voltage Input Voltage Operating Temperature Storage Temperature Symbol VDD VIN TOPR TSTR Rating -0.3 to 6 V -0.3 to Vdd+0.3 V -0 to 70 C -55 to 125 C Condition
7 AC Electrical Characteristics
READ CYCLE
There are two ways of accessing the ROM data. The first one is to assert the valid address on the Address Bus, then assert CEn "low" to enable the ROM array. The access time in this mode is specified as tACE. The advantage of this access mode is that power consumption can be lowered. The second access mode keeps the CEn "low" while changes the addresses to access the contents of ROM data. The access time in
August 27, 2003 Page 5 of 6 V1.1
This specification is subject to change without notice. Please contact sales person for the latest version before use.
King Billion Electronics Co., Ltd SF23C4000

this way is specified as tAA. In this device, the Address Access Time decrease monotonically with increasing voltage, and it is shorter than Chip Enable Access Time when the Operation Voltage is higher then 4.5 V. Therefore in Vop higher than 4.5 Volts, it is more advisable to use the Address Access Mode to achieve faster access to ROM data when the power consumption is not a concern.
Item Symbol 2.4V 3.0V 3.3V 3.6V 4.5V 5.0V 5.5V Chip Enable Access Time tACE 280 190 170 150 150 190 210 Address Access Time tAA 240 210 210 210 200 190 180 Unit ns ns Remark Min Min
8 DC Electrical Characteristics
(VSS = 0V, VDD = 5.0 V, TOPR = 25C unless otherwise noted)
Parameter Supply Voltage Operating Current Standby Current Input voltage Input current leakage D Output High Voltage D Output Low Voltage
Symbol VDD IDD IDD VIH VIL IIL VOH VOL
Min. 2.4 2/3 0 2.4 -
Typical 10 10 -
Max. 5.5 1 1/3 +/- 10 0.4
Unit V mA A VDD A V V
Condition No load No load VDD = 4V ~ 6V IOH = 14 mA IOL = 3 mA
9 Updated History
Version Date Update Description
August 27, 2003
Page 6 of 6
V1.1
This specification is subject to change without notice. Please contact sales person for the latest version before use.

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